MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers

We demonstrate the realization of a quantum cascade laser (QCL) based on strained InGaAs/AlGaAs/GaAs grown on GaAs substrate using molecular beam epitaxy. The material is compared to a GaAs/AlGaAs structure with nominally identical radiative transitions. Lasing at 10 microns was achieved in the strained and the unstrained material. The strained material shows an improved temperature performance with a T0=112K between 125 K and 200 K and a maximum working temperature of T=200 K.