Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile
Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile
Kögler, R.; Skorupa, W.; Yankov, R. A.; Posselt, M.; Danilin, A. B.
Informations can be requested. Email: M.Posselt@fz-rossendorf.de
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Contribution to external collection
Proc. 1998 Int. Conf. on Ion Implantation Technology, Kyoto, Japan, June 22-26, 1998, eds.: J. Matsuo, G. Takaoka, Y. Yamada; IEEE, Piscataway, USA, 1998, IEEE Publications 98EX144, p. 1117
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