Ion beam synthesis of shallow Ge nanocluster bands in thin SiO2 films for non-volatile memory applications

Ion beam synthesis of shallow Ge nanocluster bands in thin SiO2 films for non-volatile memory applications

von Borany, J.; Gebel, T.; Heinig, K.-H.; Klimenkov, M.; Stegemann, K.-H.; Thees, H.-J.; Wittmaack, M.

Ion beam synthesis has been applied to fabricate semiconductor (Si, Ge) nanoclusters in thin gate SiO2 films for non-volatile memory applications. The cluster size (2-3 nm), the cluster density (>5x10E11 cm-2) and the short distance to the Si/SiO2 fulfill main requirements for a cluster related memory cell. The charge storage have been clearly established at MOS and transistor structures by the shift of the flatband or threshold voltage, respectively. Typical programming windows are in the order of 1-2 V and the endurance is > 10E6 w/e-cycles. Differences of Si- and Ge-cluster containing SiO2 films with respect to the retention behaviour are finally discussed.

Keywords: ion beam synthesis; nanoclusters; nanoelectronics; non-volatile memories

  • Poster
    Poster presented at IEEE Intern. Conference on Industrial Electronics (IECON 2000), Oct. 22-28, 2000, Nagoya, Japan; Proceedings, pp. 1900-1904, ed. by the IEEE Industrial Electronics Society
  • Contribution to proceedings
    Poster presented at IEEE Intern. Conference on Industrial Electronics (IECON 2000), Oct. 22-28, 2000, Nagoya, Japan; Proceedings, pp. 1900-1904, ed. by the IEEE Industrial Electronics Society

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