Data publication: Universal radiation tolerant semiconductor

Data publication: Universal radiation tolerant semiconductor

Bektas, U.; Chekhonin, P.; Klingner, N.; Hlawacek, G.

Keywords: ion irradiation; Ga2O3; phase transformation; Polymorph; EBSD

Involved research facilities

• Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

• DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37095) publication
• DOI: 10.1038/s41467-023-40588-0 references this (Id 37095) publication
• Universal radiation tolerant semiconductor
  ROBIS: 36900 has used this (Id 37095) publication of HZDR-primary research data

• Reseach data in the HZDR data repository RODARE
  Publication date: 2023-06-09 Open access
  DOI: 10.14278/rodare.2330
  Versions: 10.14278/rodare.2331
  License: CC-BY-4.0

Downloads

• Veröffentlichung im HZDR-Daten-Repository RODARE - Id 2330

Permalink: https://www.hzdr.de/publications/Publ-37095