Exceptionally high-temperature in-air stability of transparent conductive oxide tantalum-doped tin dioxide
Exceptionally high-temperature in-air stability of transparent conductive oxide tantalum-doped tin dioxide
Krause, M.; Hoppe, M.; Romero-Muñiz, C.; Mendez, A.; Munnik, F.; Garcia Valenzuela, A.; Schimpf, C.; Rafaja, D.; Escobar-Galindo, R.
The compositional, optical and structural stability of transparent conductive oxide SnO2:Ta (1.25 at.% Ta) thin films at 650 °C and 800 °C in air was studied under isothermal conditions. After the high-temperature treatment, the element composition and the optical spectra of the material were unchanged. The X-ray diffraction confirmed the conservation of a single rutile-type phase. Two strong Raman lines located out of the SnO2 phonon range indicated point defects in the material, which were identified as Sn vacancies and O interstitials by theoretical calculations. These point defects were partially healed out during the high-temperature treatment, without affecting the transmittance and reflectance of the material. Our study demonstrates an exceptional high in-air stability of Ta-doped SnO2 and encourages it for applications in fields, where transparent conductive oxides with high-temperature and oxidation stability are required. These are, e.g., selective transmitters for concentrated solar power or electrodes for dye-sensitized solar cells and dynamic random-access memories.
Keywords: High-temperature materials; Transparent conductive oxides; Ta-doped tin oxide; Point defects; Raman spectroscopy; Density functional theory calculations
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- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37190) publication
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Journal of Materials Chemistry A 11(2023), 17686-17698
DOI: 10.1039/d3ta00998j
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