Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters
Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters
Bauer, A.; Reischauer, P.; Kräusslich, J.; Schell, N.; Matz, W.; Götz, K.
The atomic positions of the silicon carbide polytypes 6H and 4H differ slightly from an ideal tetrahedron. These small deviations can be investigated by X-ray diffraction of so-called "quasiforbidden" reflectios, which are very sensitive to the extremly small variations in the structure.
Keywords: SiC; atomic structure; synchrotron X-ray diffraction
- Acta Cryst. A57 (2001) 60-67
Permalink: https://www.hzdr.de/publications/Publ-3721
