Laterally structured surfaces of GaAs(001) characterized by conventional and synchrotron X-ray methods

The samples with different laterally structured surfaces were investigated by means of triple crystal X-ray diffractometry and synchrotron reflectivity measurements. Studies including surface grating created by photolithography methods (the surface grating were of the same material as the substrate) and stepped surface created by the intentionally off-oriented surface were performed. The X-ray triple crystal arrangement allows us to measure reciprocal space maps of the scattered intensity, separating the intensity contributions of the scattered truncation rods on the first kind of samples. The synchrotron non-specular reflectivity measurements at ESRF were essential for proving the existence of stepped surfaces and examination of their structure.