The surface grating on GaAs(001) characterized by conventional and synchrotron X-ray methods

The investigation by means of triple crystal X-ray diffractometry and synchrotron reflectivity measurements were performed in two different kinds of laterally structured samples: (i) the simple surface grating created by photolithography methods (the surface grating were of the same material as the substrate) and (ii) stepped surface created by the intentionally off-oriented surface. The X-ray triple crystal arrangement allows us to measure reciprocal space maps of the scattered intensity, separating the intensity contributions of the scattered truncation rods on the first kind of samples. The synchrotron non-specular reflectivity measurements at ESRF were essential for proving the existence of stepped surfaces and examination of their structure.