Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

Ion-cutting technology is an ingenious solution to the high-quality heterogeneous integration of GaN thin films with CMOS-compatible Si(100) substrate, which provides a platform to combine GaN-based optoelectronics, high-frequency and high-power electronics with digital signal processing, logic computation, and control of Si(100) CMOS. Previously, we reported the fabrication of 2-inch GaN film on SiO2/Si(100) substrate (GaNOI) by the ion-cutting technology. In this study, we further study the defect evolution in the transferred GaN films, which is needed to promote the practical applications of the GaNOI material platform.