Application of focused ion beams for quantum and information technologies
Application of focused ion beams for quantum and information technologies
In the first part, we present our recent result on mask-free nanofabrication involving a quasi-deterministic creation of single G- and W-centers in silicon wafers using focused-ion beam (FIB) writing. Using these centers, we implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate telecom single photon emitters at desired positions on the nanoscale In the second part, we present a concept of ultralong, high-density data archiving based on optically active atomic-size defects in silicon carbide (SiC). The information is written in these defects by FIB and read using photoluminescence (PL) or cathodoluminescence (CL). With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs.
Keywords: Quantum technology; Defects; Focused ion beam
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37705) publication
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Invited lecture (Conferences)
(Online presentation)
Sino-German Symposium Defect Engineering in SiC and Other Wide Bandgap Semiconductor, 23.-24.10.2023, Conference Center, SUSTech, Shenzhen, Guangdong, China
Permalink: https://www.hzdr.de/publications/Publ-37705