Surface studies of p-GaN:Cs photocathodes with in-situ X-ray photoelectron spectroscopy (XPS)
Surface studies of p-GaN:Cs photocathodes with in-situ X-ray photoelectron spectroscopy (XPS)
Higher beam currents and brightness are desired, therefore new photocathodes with higher QE are required.
p-type GaN can produce a negative electron affinity (NEA) surface when cesium is deposited on it.
A thermal cleaning under vacuum was carried out to achieve an atomically clean surface before the Cs deposition.
Keywords: p-GaN photocathode; XPS surface studies; semiconductor; surface cleaning
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 38112) publication
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Poster
Photocathode Physics for Photoinjectors Workshop, 03.-05.10.2023, Stoney Brook University, USA
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