In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film
In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film
Cai, X.; Chen, C.; Xie, L.; Wang, C.; Gui, Z.; Gao, Y.; Kentsch, U.; Zhou, G.; Gao, X.; Chen, Y.; Zhou, S.; Gao, W.; Liu, J.-M.; Zhu, Y.; Chen, D.
The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 38126) publication
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Nature Communications 14(2023), 8174
DOI: 10.1038/s41467-023-44091-4
Permalink: https://www.hzdr.de/publications/Publ-38126