Focused Ion Beam Sputtering Investigations on SiC

The focused ion beam is a very useful tool to sputter holes with well defined dimensions which can be easily analysed by surface profiling measurements. Applying this the sputte-ring yields of 6H:SiC were -measured for 35 and 70 keV Si, Co, Ge, Nd and Au ions from a mass separated focused ion beam. Additionally, the sputtering yield was determin-ed as a function of the angle of incidence and the target temperature for gold ions. The swelling due to ion implantation will be discussed.