Writing Cobalt FIB implantation into 6H:SiC

Focused ion beam implantation of cobalt at 35 keV into 6H:SiC is used to investigate a possible ion beam synthesis of CoSi2 micro-structures. The pattern were studied using SEM and EDX measurements. The resistivity of the implanted test-structures was determined as a function of dose, implantation and annealing temperature. For room temperature irradiated samples after a 1150°C annealing resistivities of about 100 µScm could be achieved and a diode like behaviour influenced by parasitic resistors between structure and bulk was found.