Focused ion beam sputtering yield measurements for cobalt ions on silicon and related materials

The sputtering yield of crystalline, amorphous, and poly-silicon, as well as SiO2 and SiC, was investigated for 35 keV Co+ focused ion beam irradiation using the volume loss method. The sputtered holes were analysed by SEM and surface profiling. For crystalline silicon targets, the sputtering yield was determined as a function of the incident angle of the ions and substrate temperature.