Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon
Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon
Jäger, H.-U.
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Contribution to external collection
Simulation of Semiconductor Devices and Processes, vol. 5, editors: S. Selberherr, H. Stippel and E. Strasser, Springer-Verlag Wien, 1993, p. 137-140
DOI: 10.1007/978-3-7091-6657-4_33
Permalink: https://www.hzdr.de/publications/Publ-42