Atomic scale simulation of structural relaxation processes in tetrahedal amorphous carbon


Atomic scale simulation of structural relaxation processes in tetrahedal amorphous carbon

Belov, A.

Structural relaxation processes in tetrahedral amorphous carbon (ta-C) are examined at the atomic scale using computer simulation techniques and Brenner's bond-order potential. The amorphous carbon networks generated by ion-beam deposition simulation are employed as structural models of as-prepared ta-C. The models possess high intrinsic compressive stresses (~10 GPa) typical of as-grown ta-C films. Simulating annealing by the molecular-dynamics method, structural changes due to the relaxation of the ta-C networks were observed. In agreement with experiment, it is shown that low-temperature structural relaxation in ta-C is accompanied by a considerable stress reduction with only minor changes in the structural disorder and density. A complete stress relief is found to occur at Ta ~1000 K. The stress relief mechanism discussed on the basis of the molecular-dynamics simulations includes structural transformations within the sp3 -bonded constituent of ta-C networks and doesn't require oriented clustering of sp2 -bonded atoms.

Keywords: Structural relaxation; molecular dynamics; tetrahedral amorphous carbon; intrinsic stress

  • Computational Materials Science 27 (2003) 30-35

Permalink: https://www.hzdr.de/publications/Publ-4527