Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings

Ottaviani, L.; Lazar, M.; Locatelli, M. L.; Monteil, Y.; Heera, V.; Voelskow, M.; Skorupa, W.

no abstract delivered from author

Keywords: SiC; Al Implantation; High Temperature Annealing

Permalink: https://www.hzdr.de/publications/Publ-4714