Optical Pattern Formation in a-SiC:H Films by Ga+ Ion Implantation

The optical modification effect of Ga+ ion implantation in a-SiC:H films has been studied. As a result of the implantation a well expressed "darkening" effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5-3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer operated Ga+ focused ion beam. Possible applications of this effect in the area of sub-micron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga+ liquid metal ion sources. The physical basis for the advantages in cases of applications in adverse environments have also been discussed.