Dependence of electrical conductance of a-Si:H films on Na concentration in glass substrate

The electrical conductance of a-Si:H is studied in films deposited on ion-exchanged optical waveguides in glass substrates. The effect of chemical composition of the near-surface region of the waveguide is considered from the viewpoint of the electrical instability of a-Si:H related with the penetration of Na ions from the substrate into the film. The optical waveguides have been prepared by Ag+-Na+ or K+-Na+ thermal or field-assisted ion exchange in soda-lime glass (SLG). The Na concentration in the near-surface region of the glass substrate has been established by means of elastic recoil detection analysis (ERDA). The obtained results demonstrate the possibility of reduction of electrical instability of a-Si:H films deposited on optical waveguides in glass. It is shown that in some cases an additional Na depletion of the near-surface region is necessary to avoid Na contamination of the a-Si:H films.