Characterization of Sn films on silicon by slow positron implantation spectroscopy

Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron
implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure
of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their
properties are discussed.