Evidence of vacancy-type defects at Rp/2 in ion-implanted Si after annealing

The contribution reviewed the state of the art regarding the so called Rp/2 gettering effect. It was shown that ion implantation induced excess vacancies and their agglomerates are the origin of metal gettering in the Rp/2 region of ion-implanted Si. Metal atoms are gettered at the inner wall of the cavities. The removal of the excess vacancies by defect engineering avoids metal gettering at Rp/2. Interstitial-type defects (small clusters of interstitials) are as well present in the Rp/2 region. However, their gettering capability for metal impurities is much smaller than that of the vacancy-type defects.