Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by positron implantation spectroscopy


Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by positron implantation spectroscopy

Brauer, G.; Anwand, W.; Skorupa, W.

no abstract delivered from author

Keywords: kein

  • Lecture (others)
    IIM Program Seminar, Marienthal Monastery, Germany, June 11-13, 2001

Permalink: https://www.hzdr.de/publications/Publ-4813