Si- and Ge nanoclusters in ion implanted SiO2: electrical properties and memory applications
Si- and Ge nanoclusters in ion implanted SiO2: electrical properties and memory applications
Gebel, T.
The talk gives an overwiew about current results from IV and CV investigations of Ge and Si implanted oxide layers. The electric properties of the devices and the investigation of memory parameters will be discussed.
Keywords: non volatile memory; nanocluster
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Lecture (others)
Lecture at the Institute of Semiconductor Physics, Academy of Science, 16.11.2001, Kiev (Ukraine)
Permalink: https://www.hzdr.de/publications/Publ-4847
