Effect of ion implantation on the structural properties of a-Si:H films

A comparative study of the effect of H+ and Si+ ion implantation on the hydrogenated amorphous silicon (a-Si:H) has been carried out in order to explore the interaction of hydrogen with the structural defects and to separate their contribution to the intrinsic compressive stress in the films. a-Si:H films were prepared by plasma-enhanced chemical vapor deposition. Raman scattering spectroscopy and infrared spectroscopy have been used to study the variations of the short range order of the silicon network and of the hydrogen bonding configuration, respectively. It has been suggested that the essential difference in the structural damage introduced by H+ and Si+ ion implantation could be related with the insertion of molecular hydrogen.