The effects of implantation temperature on He bubble formation in silicon

In the present contribution, we report experimental results on the formation of He-induced cavities in Cz grown (1 0 0) Si samples implanted with 40 keV He⁺ ions to a fluence of 1×10¹⁶ cm^-2 at four implantation temperatures, 77, 133, 233 and 300 K, and submitted to rapid thermal annealing at 1073 K for 600 s. The as-implanted samples were analyzed by Rutherford backscattering/channeling spectrometry (RBS/C) and the annealed ones by transmission electron microscopy (TEM). The results obtained show that the characteristics of the produced cavity systems depends significantly on the implantation temperature. A correlation between the dynamic annealing behavior and the bubble nucleation process is proposed.