A study of the compositional structure and electrical behaviour of thin silicon oxynitride layers prepared by rapid thermal processing

SiO(x)N(y) layers in the thickness range from 4 to 20 nm are grown by rapid thermal processing (RTP) using NH3 and N2O as nitridants. I-V measurements,
investigation of the time-dependent breakdown, and post-stress C-V display significant distinctions between the layers according to their growth conditions. For the
explanation of the electrical behaviour, the compositional structure was examined by means of AES, SIMS, and NRA.