Catohodoluminescence Depth Profiling in SiO2:Ge Layers

For investigation of luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy Eo = 2..30 keV. Applying a constant incident power regime (Eo x Io = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx.
Thermally grown SiO2 layers of thickness d = 500 nm have been implanted by Ge+-ions of energy 350 keV and doses (0.5-5)E16 ion/cm2. Thus Ge profiles with a concentration maximum (0.4-4)at% at the depth of dm = 240 nm are expected. Afterwards the layers have been partially annealed up to Ta = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (at 400 nm) of the Ge centers is strongly increased but also the luminescence center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.