CL and EDX depth profiling in Ge-implanted SiO2 layers

CL and EDX depth profiling in Ge-implanted SiO2 layers

Fitting, H. J.; Barfels, T.; Schmidt, B.; von Czarnowski, A.

The lateral resolution of energy dispersive X-ray analysis (EDX) and cathodoluminescence (CL) mapping in a scanning electron microscope (SEM) can be extended to depth analysis by means of varying the electron beam energy, Eo, and thus the excitation range R(E).Comparing the Ge atom profiles nGe(x) shift with those of the CL center profiles nCL(x) after thermal annealing a much smaller displacement of the Ge atom concentration with respect to the profile shift of the luminescent centers towards the surface was detected.

  • Lecture (Conference)
    Proceedings of the 15th International Congress on Electron Microscopy, Vol. 1: Physical, Materials and Earth Sciences, pp. 797-798, September 1-6, 2002, Durban, South Africa
  • Contribution to proceedings
    Proceedings of the 15th International Congress on Electron Microscopy, Vol. 1: Physical, Materials and Earth Sciences, pp. 797-798, September 1-6, 2002, Durban, South Africa

Permalink: https://www.hzdr.de/publications/Publ-5069