Atomic processes at bonded Si-interfaces studied by molecular dynamics: tailoring densities and band gaps?

Molecular dynamics simulations using empirical potentials have been employed to describe atomic interactions at interfaces created by the macroscopic wafer bonding process. Investigating perfect or distorted surfaces of different semiconductor materials enables one to study the elementary processes and the resulting defects at the interfaces, and to characterize the ability of the potentials used. Twist rotation due to misalignment and bonding over steps influence strongly the bondability of larger areas and create new types of structural units at the bonded interfaces. Ab initio density functional based simulations establish the structural units to be the stable minimum configurations and enable to predict modified electronic properties.