Self-organized NcC-layers by conventional ion implantation (status report for WP2)

The report includes results of hydrogen depth profiling using Nuclear Reaction Analysis (NRA) as well as 18O depth profiling using Time-of-Fligt Secondary Ion Mass Spectroscopy (ToF-SIMS) in as implanted SiO2-layers. The measured depth profiles of H and 18O, respectively, clearly show, that as-implanted SiO2-layers soak in humidity from the ambient, which significanly influences the processes of nanocluster growth in thin SiO2-layers during thermal processing of these layers.