TEM Study of GaAs Implanted by High Dose Nitrogen Ions
TEM Study of GaAs Implanted by High Dose Nitrogen Ions
Pecz, B.; Toth, L.; Dobos, L.; Szuts, T.; Heera, V.; Skorupa, W.; Dekorsy, T.
Nitrogen ions were implanted into (100)GaAs at high temperature (400 and 600oC) and high dose (2x10^17 and 6x10^17 ions cm-2) in order to synthesize small GaN crystallites. The defective strip due to implantation is about 500 nm thick and stacking faults appeared as the characteristic defect. Selected area diffraction patterns show that cubic GaN was formed in samples implanted at 600oC. The precipitates formed are typically 5 nm large and are epitaxial to the host GaAs. Some larger precipitates are also observed from which the matching of the two lattices could be determined.
Keywords: GaAs; N implantation; GaN formation; Ion beam synthesis; XTEM
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Lecture (Conference)
Thirteenth International Conference on Microscopy of Semiconducting Materials Churchill College, University of Cambridge, 31 March-3 April 2003,Cambridge, Great Britain, Institute of Physics Conference Series No. 180(2004), 441-444 -
Contribution to proceedings
Thirteenth International Conference on Microscopy of Semiconducting Materials Churchill College, University of Cambridge, 31 March-3 April 2003, Inst. Phys. Conf. Ser. No. 180 (2004) 441-444
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