Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

Si (100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum dose of approximately 1×1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p, αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM and an attempt is made to explain the peculiarities of the experimental spectra, as well as to compare with results already existing in literature