Slow positron beam investigations of defects caused by B implantation into epitaxial 6H-SiC

B+ implantation into epitaxial 6H-SiC has been carried out in order to create a laterally structured p-doped layer. The defects caused by the ion implantation should be minimized by implantation at higher substrate temperatures and post implantation annealing. Using Slow Positron Implantation Spectroscopy (SPIS), the distribution of vacancy-type defects after ion implantation could be evaluated and the efficiency of the annealing could be demonstrated. Furthermore, first results about the boron distribution after annealing are shown.