Structure and energetics of defects: A comparative study of 3C- and 4H-SiC

The structures, formation energies and stable configurations of elementary defects (vacancies, antisite defects and self interstitials) in 3C- and 4H-SiC are studied using classical molecular dynamics simulation with a recently developed interatomic potential. The defect structures in 3C-SiC are relative simple, but those in 4H-SiC are more complicated. The interstitials between hexagonal and trigonal rings are characteristic for 4H-SiC and other hexagonal polytypes, but not for 3C-SiC. The number of non-equivalent defects in 4H-SiC is much higher than in 3C-SiC, and a considerable difference is found for some complex and anisotropic defects, in particular for the dumbbells D1Si-Si, D1Si-C and D2Si-C. The lattice deformation beyond the first nearest neighbor shell, which depends strongly on the polytype structure, plays an important role on these effects. However, the polytypism does not have a significant influence on the structure and energetics of the more compact and isotropic defects, such as vacancies and antisite defects. Despite the complexity of defect configurations, the tetrahedral interstitials have very similar properties in 3C- and 4H-SiC because their first, second and third nearest neighbor shells are equal.