Flash lamp supported deposition of 3C-SiC (FLASiC) - a promising technique to produce high quality cubic SiC layers

The production of cubic SiC (3C-SiC) layers in device quality through the epitaxial growth on (100)-Si wafers has remained a challenging task yet. Recently, it was demonstrated that the use of Flash Lamp Processing (FLP) can support the production of high quality 3C-SiC layers in a promising manner. The FLASiC team organized within a project of the V. Framework of the European Community is currently extending this early work as a broader approach with the following main aspects: a) Development of the epitaxial process including FLP, b) Development of a prototype equipment for the FLP, and c) Demonstrating the improved quality at dedicated devices. In this talk a short overview will be given regarding the latest advancements of this new approach.