Investigation of thick 3C-SiC films re-grown on thin 35nm "Flash Lamp Annealed" 3C-SiC

We report on the formation of thick 3C-SiC films on 3C-SiC/Si substrates which were produced by flash lamp processing (FLP). Employing a three step process, firstly a 35nm thick 3C-SiC film on a <100>-Si substrate is deposited which is followed, secondly by FLP. This leads to a melting of the SiC/Si interface region within 20ms followed by epitaxial solidification. Then, in a third step, this film is used as a seed for the deposition of a second, 3 µm thick, 3C-SiC layer. This newly developed process including FLP is called FLASiC (Flash LAmp supported deposition of Silicon Carbide). Compared with standard 3 µm thick layers directly grown on silicon, both transmission electron microscopy and low temperature photoluminescence evidence improvement of the re-grown material.