Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

Skorupa, W.; Panknin, D.; Voelskow, M.; Anwand, W.; Gebel, T.; Yankov, R. A.; Paul, S.; Lerch, W.

The use of flash lamp annealing for processing semiconductor materials is outlined. Specific applications include ultra-shallow junction formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide. It is demonstrated that flash lamp annealing holds great promise as a technique for fabricating novel devices.

Keywords: flash lamp annealing; ultra shallow junctios; silicon carbide-silicon heteroepitaxy; ion implantation

  • Lecture (Conference)
    Materials Research Society Spring Meeting, Symp.C: Silicon Front-End Junction Formation—Physics and Technology, 12.-16.04.2004, San Francisco, USA
  • Contribution to proceedings
    Materials Research Society Spring Meeting, Symp.C: Silicon Front-End Junction Formation - Physics and Technology, 12.-16.04.2004, San Franzisco, USA
    Proceeding 810(2004), C4.16, C4.16

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