Modification of growth mode of Ge on Si by pulsed low-energy ion-beam irradiation
Modification of growth mode of Ge on Si by pulsed low-energy ion-beam irradiation
Dvurechenskii, A. V.; Smagina, J. V.; Zinovyev, V. A.; Grötzschel, R.; Teys, S. A.; Gutakovskii, A. K.
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Contribution to external collection
Proc. of 11th Int. Symp. "Nanostructures: Physics and Technology", St. Petersburg, Russia, June 23-28, 2003, p. 305
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