Ion beam characterization and engineering of strain in semiconductor multilayers

Nageswara Rao, S. V. S.; Pathak, A. P.; Siddiqui, A. M.; Avashti, D. K.; Muntele, C.; Dev, B. N.; Muralidharan, R.; Eichhorn, F.; Grötzschel, R.; Turos, A.

doi:10.1016/S0168-583X(03)01719-1

Ion beam characterization and engineering of strain in semiconductor multilayers

Nageswara Rao, S. V. S.; Pathak, A. P.; Siddiqui, A. M.; Avashti, D. K.; Muntele, C.; Dev, B. N.; Muralidharan, R.; Eichhorn, F.; Grötzschel, R.; Turos, A.

Nuclear Instruments and Methods B 212 (2003) 442
DOI: 10.1016/S0168-583X(03)01719-1
Cited 14 times in Scopus

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