Properties of Ge nanocrystals formed by implantation of Ge⁺ ions into SiO₂ films with subsequent annealing under hydrostatic pressure

Properties of Ge nanocrystals formed by implantation of Ge⁺ ions into SiO₂ films with subsequent annealing under hydrostatic pressure

Tyschenko, I. E.; Talochkin, A. B.; Cherkov, A. G.; Zhuravlev, K. S.; Misiuk, A.; Yankov, R. A.; Skorupa, W.

• Semiconductors 37 (2003) 462

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