Raman and HRTEM investigations of Ge nanocrystals produced by Ge⁺ ion implantation of SiO₂ films and subsequent high pressure annealing

Raman and HRTEM investigations of Ge nanocrystals produced by Ge⁺ ion implantation of SiO₂ films and subsequent high pressure annealing

Tyschenko, I. E.; Talochkin, A. B.; Cherkov, A. G.; Zhuravlev, K. S.; Misiuk, A.; Yankov, R. A.; Skorupa, W.

• Contribution to external collection
  Proc. SPIE Int. Soc. Opt. Eng. 5136 (2003) 236

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