Electrical effects of residual defects in Si after high energy implantation of Ge+ ions and annealing

Electrical effects of residual defects in Si after high energy implantation of Ge+ ions and annealing

Kögler, R.; von Borany, J.; Panknin, D.; Skorupa, W.

• Nuclear Instruments and Methods in Physics Research B 89 (1994) pp. 350-353
  DOI: 10.1016/0168-583X(94)95198-5
  Cited 3 times in Scopus

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