Efecto del Ar en películas CNxHy depositadas mediante ECR-CVD

Carbon nitride films have been deposited by ECR-CVD, from Ar/CH4/N2 gas mixtures with different methane concentrations. Infrared Spectroscopy and Elastic Recoil Detection Analysis have been used for films characterisation and Optical Emission Spectroscopy for plasma analysis. Argon concentration in the gas mixture controls the growth rate as well as the composition of the film. In the proposed model, argon plays a key role in the activation of methane molecules. Also, during the growth of the film, two processes may be considered: i) Film formation and ii) Etching of the growing surface. Changing the gas mixture composition affects both processes, which results in films with different composition and structure as well as different deposition rates.