THz emission from GaSb samples with modified surface stoichiometry

Winnerl, S.; Sinning, S.; Dekorsy, T.; Helm, M.

THz emission from GaSb samples with modified surface stoichiometry

Winnerl, S.; Sinning, S.; Dekorsy, T.; Helm, M.

We prepared efficient THz emitters based on photoexcited (fs-laser pulses) carriers in GaSb. Annealing (range 300 °C - 700 °C) provided a simple way for optimization. This is due to a surface field caused by a decomposition of the surface induced by the annealing. The decomposition is confirmed by Raman spectroscopy.

Keywords: THz emission; GaSb; Raman spectroscopy

Lecture (Conference)
The Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (IRMMW2004/THz2004), 28.09.-1.10.2004, Karlsruhe, Deutschland
IEEE Conference digest IRMMW2004/THz2004

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