CoSi2 nano wires synthesized by FIB processing

Nano structures, like wires or pearl chains play an increasing role in areas as plasmonics, nano-optics or nano-electronics as well as in the implementation of optical components in microelectronic devices. CoSi2 is a promising materials candidate due to its metallic behaviour with low resistivity and the compatibility to the microelectronics technology. Two methods to fabricate CoSi2 -nano – wires using FIB technique in terms of ion beam synthesis (IBS) are investigated. An oxide layer, structured by use of a high resolution Ga beam, acting as an implantation mask for a broad beam Co doping and subsequent annealing was investigated and discussed. Secondly, a mass separated FIB of cobalt is applied for a direct writing IBS process. Therefore different alloys as source materials were tested and applied in the FIB column (Canion 31Mplus, Orsay Physics). The use of the doubly charged ions emitted from the Co source allows to increase the implantation energy up to 60 keV, important to obtain buried structures of high quality.