Application of ultra-high energy boron implantation for superjunction power (CoolMOS) devices

Superjunction devices (SJDs) are a novel class of power devices which break the physical limit of silicon with respect to the area specific turn-on-resistance. SJDs consist of a modified vertical MOSFET structure which is characterized by additional deep pillar-like p-type regions formed inside the n(-) epi-layer below the transistor gate. In the present investigation ultra-high energy boron ion implantation of 2-25 MeV were applied for forming the deep p-type regions laterally structured using Si stencilmasks. For energies above 12 MeV the incident ions exceed the Coulomb barrier for Si which leads (i) to a significant gamma and neutron emission during implantation and, (ii) an activation of the wafer and the mask material. Fortunately, the most relevant reaction (11B+28Si >n,alpha>34mCl> 34S+beta) has a half-life time of only 32 min so that the radiation level of the wafers drops below the critical radiation protection limit within the processing time. Based on the described technology Infineon Technologies successfully prepared a set of prototype wafers with fully functional high-voltage transistors. Typical blocking capability was in the range of 560 V with an on-state resistance of about 185 mOhm.