Incident Ion Monitoring during Plasma Immersion Ion Implantation by Direct Measurements of High Energy Secondary Electrons

The present paper investigated time-resolved incident ion monitoring during PIII processes on the basis of high energy secondary electron measurements with scintillation technique. Taking into consideration the sheath geometry and a secondary electron emission coefficient of the target material, the experimental data were in a good agreement with theoretical predictions for dependences on target-voltage, pressure and plasma density.