Writing FIB Implantation an Subsequent Anisotropic Wet Chemical Etching for Fabrication of 3D Structures in Silicon

The further miniaturization of silicon micromechanical
structures in combination with the high developed microelectronic technology
at the mm- and sub-mm level will lead to a new generation of microdevices.
A modern technique to fabricate three dimensional micromechanical structures
is the combination of high concentration p+-doping by writing ion implantation
using a focused ion beam (FIB) and subsequent anisotropic and selective
wet chemical etching. FIB patterned and chemical etched 3D structures have
been fabricated using 35 keV Ga+-ion implantation and subsequent anisotropic
etching in KOH/H2O-solution. The Ga+-FIB patterned test structures were
characterized by scanning electron microscopy.