Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

This paper describes the development of a thermal model for flash lamp processing of 3C-SiC on silicon substrates in the millisecond regime, the FLASiC process. The model is a numerical solution of the enthalpy equation, using a modified implicit Crank-Nicholson scheme to combine accurate prediction of melt depths with reasonable computation times. The model has been calibrated against experiments and then used to compute the temperature distribution in the wafer during annealing. The results show the time and extent of melting as a function of layer thickness, wafer preheat temperature, and pulse intensity and duration. The kinetics of melting and regrowth have also been considered.